This 0.13um triple gate oxide CMOS process features one additional layer of gate oxide introducing 1.8V CMOS into a standard 1.2/3.3V CMOS array on 0.13um technology. This process is fully compatible with the standard CMOS process and is designed to keep all device parameters unchanged within process variation ranges.
Using a modular characteristic for IC design provides added flexibility by allowing the selection of either 1.2/3.3V or 1.2/1.8/3.3V CMOS processes without the need for design reverification. The triple gate oxide process for 1.2/1.8/3.3V also allows for a reduction in chip size providing a more cost-effective manufacturing process through optimization and integration of various functional blocks into one compact chip. This is particularly useful for mobile device applications.
"We are very pleased to offer a 0.13um triple gate oxide CMOS process solution for wide voltage, mixed-signal applications," said T.J. Lee, Executive Vice President and General Manager of MagnaChip's Corporate Engineering. "This is an example of our dedication and effort to expand our technology to premium mixed-signal processes at advanced technology nodes. Our goal is to continue to provide differentiated process solutions to meet the application-specific needs of our worldwide foundry customers."
About MagnaChip Semiconductor
Headquartered in South Korea, MagnaChip Semiconductor is a Korea-based designer and manufacturer of analog and mixed-signal semiconductor products for high volume consumer applications. MagnaChip believes it has one of the broadest and deepest range of analog and mixed-signal semiconductor platforms in the industry, supported by its 30-year operating history, a large portfolio of registered and pending patents and extensive engineering and manufacturing process expertise. For more information, please visit www.magnachip.com.
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