Toshiba Launches Low ON-Resistance Power MOSFET for Automotive Applications

Also achieves low leakage current and 175°C operation

TOKYO — (BUSINESS WIRE) — January 15, 2013 — Toshiba Corporation (TOKYO:6502) has launched a low ON-resistance power MOSFET as the latest addition to its TO-220SIS package series for automotive applications. The new product, "TK80A04K3L", also achieves low leakage current and guarantees operation at 175°C. While it is primarily suited to automotive applications, it can also be used in motor drives and switching regulators.

Toshiba low ON-resistance power MOSFET in TO-220SIS package for automotive applications (Photo: Busi ...

Toshiba low ON-resistance power MOSFET in TO-220SIS package for automotive applications (Photo: Business Wire)

Polarity   Part number  

Drain-to-source voltage


Drain Current
ID (A)

Nch   TK80A04K3L   40   80   U-MOS IV
Key Features
1.   Low ON-resistance (VGS=10V)
RDS(ON) = 1.9mΩ(typ.)
2. Low leakage current IDSS=10μA(max) (VDS=rated voltage)
3. Tch = 175°C guaranteed
4. Lead-insertion type TO-220SIS package

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