Also achieves low leakage current and 175°C operation
TOKYO — (BUSINESS WIRE) — January 15, 2013 — Toshiba Corporation (TOKYO:6502) has launched a low ON-resistance power MOSFET as the latest addition to its TO-220SIS package series for automotive applications. The new product, "TK80A04K3L", also achieves low leakage current and guarantees operation at 175°C. While it is primarily suited to automotive applications, it can also be used in motor drives and switching regulators.
Toshiba low ON-resistance power MOSFET in TO-220SIS package for automotive applications (Photo: Business Wire)
|1.||Low ON-resistance (VGS=10V)|
|RDS(ON) = 1.9mΩ(typ.)|
|2.||Low leakage current IDSS=10μA(max) (VDS=rated voltage)|
|3.||Tch = 175°C guaranteed|
|4.||Lead-insertion type TO-220SIS package|