Toshiba Launches Low ON-Resistance Power MOSFET for Automotive Applications

Latest lineup adds "DPAK+" package product suited for high-speed switching

TOKYO — (BUSINESS WIRE) — January 25, 2013 — Toshiba Corporation (TOKYO:6502) has launched a low-ON-resistance, low-leakage power MOSFET using the latest trench MOS process as an addition to the MOSFET lineup for automotive applications. The new product, "TK100S04N1L", achieves low ON-resistance with a combination of the latest 8th generation trench MOS process "U-MOS VIII-H series" chip and the "DPAK+" package that utilizes Cu (copper) connectors. The product is primarily suited for automotive applications, especially for those demanding high-speed switching, such as motor drives and switching regulators. Samples are available now with mass production scheduled to start in March 2013.

Toshiba Low ON-Resistance Power MOSFET for Automotive Applications in a "DPAK+" Package (Photo: Busi ...

Toshiba Low ON-Resistance Power MOSFET for Automotive Applications in a "DPAK+" Package (Photo: Business Wire)

 
Polarity   Part number  

Drain-to-source voltage
VDSS (V)

 

Drain Current
ID (A)

  Series
Nch   TK100S04N1L   40   100   U-MOS VIII-H
 
Key Features
1. Low ON-resistance: RDS(ON) = 1.9mΩ (typ.) (VGS=10V)
2. Low leakage current: IDSS=10μA (max) (VDS=rated voltage)
3. "DPAK+" package that realizes low-ON-resistance by utilizing Cu connectors.
4. Tch = 175°C guaranteed
 

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