Efficient Power Conversion (EPC) Announces Upgrade of Development Board Featuring Enhancement Mode Gallium Nitride (eGaN®) FETs Using Dedicated GaN FET Gate Driver from Texas Instruments

EPC9005 demonstrates the ease of designing with eGaN FETs with ready-made, easy to connect development boards and well-documented engineering support materials

EL SEGUNDO, Calif. — (BUSINESS WIRE) — April 9, 2013 — Efficient Power Conversion Corporation (EPC) today announces the availability of the EPC9005 development board, featuring EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs). This board demonstrates how IC gate drivers, optimized for eGaN FETs, make the task of transitioning from silicon to eGaN technology simple and cost effective.

The EPC9005 development board is a half bridge configuration containing two 40 V EPC2014 eGaN FETs with a 7 A maximum output current using a gate driver optimized for GaN devices, the LM5113 from Texas Instruments. The LM5113 used on this board is packaged in a 2x2 BGA package allowing for a very compact power stage with the driver and two eGaN FETs. The EPC2014 is designed for use in applications such as high-speed DC-DC power supplies, point-of-load converters, wireless charging, and high frequency circuits.

The EPC9005 simplifies the evaluation process of eGaN FETs by including all the critical components on single 2” x 1.5” boards that can be easily connected into any existing converter. In addition, there are various probe points on the board to facilitate simple waveform measurement and efficiency calculation. A Quick Start Guide is included with the development board for reference and ease of use.

EPC9005 is priced at $99.18 and, like all EPC products, is available for immediate delivery from Digi-Key at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en.

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, wireless power transmission, envelope tracking, RF transmission, power-over-ethernet (PoE), solar micro inverters, energy efficient lighting, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.



Contact:

Efficient Power Conversion Corporation
Joe Engle, 310-986-0350
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