New high performance MOSFET from Advanced Power Electronics Corp. offers very low on-resistance

PMPAK5x6 package with standard SO-8 footprint compatible with otherpopular enhanced power packages

Nov 2013, San Jose, Ca -- Advanced Power Electronics Corp. (USA), a leading Taiwanese manufacturer of MOS power semiconductors for DC-DC power conversion applications, has recently released the new AP1A003GMT-HF-3 power MOSFET with very low maximum on-resistance of only 0.99mΩ for use in high current load switching where a very low voltage drop across the MOSFET switch is required to minimise the conduction losses.

Provided in a PMPAK5x6 package with integrated thermal pad and with a standard SO-8 footprint compatible with other enhanced 5x6mm power packages, the AP1A003GMT-HF-3 power MOSFET features simple gate drive requirements, a breakdown voltage rating of 30V and a maximum drain-source current rating of 260A.

The AP1A003GMT-HF-3 power MOSFET is fully RoHS-compliant and BFR/halogen-free. Samples are available now.

For more information, a datasheet can be downloaded at

  http://www.a-powerusa.com/docs/AP1A003GMT-3.pdf.

About Advanced Power Electronics Corp.

Established in Taiwan in 1998, Advanced Power Electronics Corporation (APEC) has become a leading supplier of MOS power discretes, IGBTs and Power ICs which enable cost-effective efficient solutions for new and existing power applications. The company’s wide range of solutions broadly targets the computing, consumer electronics, display, communications and industrial segments. ISO-approved, Advanced Power Electronics Corp. (USA)’s commitment to consistent quality assurance and the increased economies of scale has seen the company increase in revenue - and trade profitably each year since its foundation - and it has been ranked as one of the world's top fifteen power transistor suppliers by iSuppli.



Contact:  

Ralph Waggitt,
President/CEO,
Advanced Power Electronics Corp. (USA),
Tel: +1 408-717-4231
Email: Email Contact
http://www.a-powerusa.com




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