GaN Systems presents paper on SPICE models for high power gallium nitride devices in automotive applications at APEC

Latest gallium nitride semiconductor technologies to be showcased on Booth 240

OTTAWA, Ontario — (BUSINESS WIRE) — January 30, 2014

APEC 2014
Fort Worth, Texas
March 16 - 20

GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, is presenting a technical paper at APEC describing the application of SPICE models developed for very high power GaN devices and integrated GaN drive circuits in automotive applications. At present, drive train power requirements of most hybrid vehicles (HVs) and electric vehicles (EVs) are met by using silicon IGBT devices, but it is expected that gallium nitride will take over as the technology of choice for this market in the near future, as GaN power transistors provide greatly enhanced performance in these applications, thanks to lower on-resistance and minimal switching losses compared to silicon-based semiconductors.

GaN Systems’ presentation describes the use of advanced thermally augmented SPICE models which were developed to enable large area GaN devices to be simulated in conjunction with an integrated GaN driver, demonstrating how gallium nitride devices can be used in the very wide temperature ranges and high electrical noise environments found in automotive applications. The presentation will be given by John Roberts, Chief Technical Officer, who co-authored the paper with colleague Hughes Lafontaine.

At the exhibition running alongside the conference, GaN Systems’ is showcasing its range of gallium nitride power switching solutions for power conversion applications featuring the company’s proprietary Island Technology™. GaN Systems’ high power devices overcome the limitations of today’s silicon-based semiconductors and bring significantly better performance and efficiency to power conversion applications for alternative energy and power supply applications in addition to electric and hybrid vehicles.


GaN Systems
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