GRENOBLE, France – Feb. 25, 2015 – CEA-Leti will present updates on its silicon photonics technology, including its results on “heterogeneously integrated III-V on silicon distributed feedback lasers at 1310nm” and hybridization of electronic and photonic ICs at OFC 2015, March 22-26, at the Los Angeles Conference Center in Los Angeles, Calif.
In addition, Hughes Metras, Leti’s vice president for strategic partnerships, North America, will participate in a panel discussion on “State of the Market/Industry: 2014 in Review,” beginning at 12:30 p.m. on March 24 in the Exhibit Hall. His topic is “ The Promises of Silicon Photonics: Current Status and Future Trends.”
Leti staff will be available at booth No. 635 in the Exhibit Hall to elaborate on the results and answer questions.
Leti will be joined by AEPI, Invest in Grenoble-Isere. AEPI provides complimentary information, introductions and services to assist companies in exploring business opportunities in the Grenoble area of France.
The silicon photonics results will be presented in two presentations at the conference:
Monday, March 23, 4:30 p.m.
Session: DSP-based Optical Access
Within the frame of the FABULOUS EU project, Leti has developed photonics ICs and integrated them with electronics ICs from STMicroelectronics by means of 3D micro-bumps. The FABULOUS project aims at demonstrating the effectiveness of a self-coherent reflective FDMA WDM PON architecture, achieving record transmission performances and demonstrating an ONU made up with CMOS electronic ICs and silicon photonic ICs.
Tuesday, March 24, 6 p.m.
Session: Lasers & Multiwavelength Transmitters
Title: “Heterogeneously Integrated III-V on Silicon Distributed Feedback Lasers at 1310nm”
Within the frame of the IRT-Nanoelec French Program, CEA-Leti develops and matures the heterogeneous III-V/ Si integration technology and edge lasers and modulators based on it: this paper will present the performances of hybrid III-V on silicon distributed feedback lasers at 1310nm. Continuous wave regime is achieved up to 55°C, with room-temperature threshold of 35 mA, while mode-hope-free operation with side- mode suppression ratio above 55 dB is measured.
In addition, Leti will present a poster at 10 a.m. on Wednesday, March 25, in the Exhibit Hall. As advanced modulation formats are considered for implementation in the next generation-transceivers for short transmissions, Leti has developed test bench for OFDM-direct detection and PAM transmissions. The poster will report on a PAM-4 transmission established by modulating a Si-RRM with a 2Vpp driving voltage. A 20Gb/s bit-rate was achieved with an 8GHz bandwidth, and maintained while the Si-chip temperature was varied from 35°C to 90°C.
Event contacts at Leti:
Head of Silicon Photonics Activities and the French IRT-Nanoelec Program, Partnerships and Business Development
Tel: +33 684 822 764
Hughes Metras (In U.S.)
VP Strategic Partnership, North America
Email: Email Contact
Tel: +1 626 537 7270
By creating innovation and transferring it to industry, Leti is the bridge between basic research and production of micro- and nanotechnologies that improve the lives of people around the world. Backed by its portfolio of 2,200 patents, Leti partners with large industrials, SMEs and startups to tailor advanced solutions that strengthen their competitive positions. It has launched more than 50 startups. Its 8,000m² of new-generation cleanroom space feature 200mm and 300mm wafer processing of micro and nano solutions for applications ranging from space to smart devices. Leti’s staff of more than 1,700 includes 200 assignees from partner companies. Leti is based in Grenoble, France, and has offices in Silicon Valley, Calif., and Tokyo. Visit www.leti.fr for more information. Follow us on www.leti.fr and @CEA_Leti.