Micron Introduces New Line of 34nm Multi-Level Cell NAND for Enterprise Storage Systems, Providing 6x the Endurance

Announcement Highlights

  • Micron introduces the industry’s highest endurance, highest capacity multi-level cell (MLC) and single-level cell (SLC) NAND flash memory designed specifically for enterprise applications
  • The company is leveraging its mature 34-nanometer (nm) process to provide customers with a 6x improvement in endurance for MLC NAND and a 3x improvement in endurance for SLC NAND
  • Micron’s 32Gb MLC and 16Gb SLC Enterprise NAND technology can be configured into multi-die, single packages enabling densities up to 32-gigabyte (GB) for MLC and 16GB for SLC

BOISE, Idaho — (BUSINESS WIRE) — October 19, 2009 — When designing solid-state storage for enterprise applications, standard SLC NAND has been the technology of choice because of its reliability and endurance. But customers are often challenged on how to cost-effectively reach their capacity requirements. Micron Technology, Inc. (NYSE: MU) is meeting customers’ requirements by announcing today that it has leveraged its award-winning 34nm NAND process to manufacture an MLC Enterprise NAND device, which provides enterprise organizations a way to cost-effectively and reliably double their flash-based enterprise storage capacity (since MLC provides twice the capacity in the same die size as SLC). Micron’s new MLC Enterprise NAND device achieves 30,000 write cycles – a 6x increase in endurance when compared to standard MLC NAND. And for enterprise applications that are more performance driven, Micron today also introduced a 34nm SLC Enterprise NAND device that achieves 300,000 write cycles – a 3x increase in endurance when compared to standard SLC NAND.

Additionally, leveraging the full performance capability of NAND, Micron’s newest Enterprise NAND products also support the ONFI 2.1 synchronous interface, delivering a 4- to 5x improvement in data transfer rates when compared to legacy NAND interfaces. Micron’s 34nm Enterprise NAND portfolio includes a 32Gb MLC NAND chip and a 16Gb SLC NAND chip that can be configured into multi-die, single packages supporting densities up to 32GB MLC and 16GB SLC, respectively. Micron is now sampling its Enterprise NAND products with customers and controller manufacturers, and is expected to be in volume production in early 2010. For further explanation on Micron’s Enterprise NAND products, visit Micron’s Innovations blog to catch a video that describes how Micron leveraged its mature 34nm NAND process to achieve these levels of reliability.

“By leveraging our mature 34nm NAND process, Micron has developed Enterprise NAND products that support customers’ high-endurance requirements. These products ensure that enterprise organizations have a highly reliable NAND flash solution – be it MLC or SLC – for design into the broader enterprise storage platform,” said Brian Shirley, vice president of Micron’s memory group.

“The use of advanced NAND flash is required to achieve broad SSD adoption in enterprise applications,” said Steffen Hellmold, vice president of business development at SandForce. “We are very excited to work with Micron and enable cost-effective, reliable, high-performance SSD solutions that support stringent enterprise lifecycle requirements.”

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About Micron

Micron Technology, Inc., is one of the world’s leading providers of advanced semiconductor solutions. Through its worldwide operations, Micron manufactures and markets DRAMs, NAND flash memory, other semiconductor components, and memory modules for use in leading-edge computing, consumer, networking, and mobile products. Micron’s common stock is traded on the New York Stock Exchange (NYSE) under the MU symbol. To learn more about Micron Technology, Inc., visit www.micron.com.

Micron and the Micron orbit logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners.

This press release contains forward-looking statements regarding the production of Micron’s Enterprise NAND products. Actual events or results may differ materially from those contained in the forward-looking statements. Please refer to the documents Micron files on a consolidated basis from time to time with the Securities and Exchange Commission, specifically Micron's most recent Form 10-K and Form 10-Q. These documents contain and identify important factors that could cause the actual results for Micron on a consolidated basis to differ materially from those contained in our forward-looking statements (see Certain Factors). Although we believe that the expectations reflected in the forward-looking statements are reasonable, we cannot guarantee future results, levels of activity, performance or achievements.



Contact:

Micron Technology, Inc.
Kirstin Bordner, 208-368-5487
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