Toshiba Adds Low On-Resistance, Fast Switching 30V MOSFETs for DC-DC Conversion in Compact, High-Current, TSON Advance Package

Six new 30V MOSFETs for Synchronous DC-DC Increase Power Efficiency

IRVINE, Calif., Nov. 11 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, has expanded its offering of 30V MOSFETs with six devices in TSON Advance packages. The new devices are intended for synchronous DC-DC converter applications in mobile and desktop computers, servers, game consoles and other electronic devices that require input voltage conversion for subsystems such as the processor, memory and other point-of-load devices. Developed by Toshiba Corp., (Toshiba) the devices are based on fifth and sixth generation UMOS V-H and UMOS VI-H process technologies to achieve low on-state resistance for the low side MOSFET and fast switching speed for high side MOSFET enabled through lower gate charge (Q(SW)). The thin, compact, 3.3mm x 3.3mm x 0.9mm TSON Advance package reduces mount area requirements by 64 percent compared to the widely used 5.0mm x 6.0mm SOP-8 package, while achieving the same power dissipation of 1.9W.

The new lineup includes five N-channel MOSFETs and one MOSBD, a combination MOSFET and Schottky Barrier Diode in a single die that provides a low inductance structure and thus, improves power efficiency. The lineup provides a range of characteristics to enable designers to meet various system requirements. Current ratings range from 13A to 26A, R(DS)(ON) (typ.) from 4.3 to 12.2milliohms, input capacitance(Ciss) from 990 to 2200 picofarads (pF) (typ.), and reverse transfer capacitance (Crss) from 54 to 140pF (typ.). Please see table below for details.

"With TSON Advance packaging, our latest MOSFETs offer designers new options to increase board density and save space, with a selection of high efficiency solutions for DC-DC conversion," said Jeff Lo, business development manager, Discrete Power Devices, for TAEC.

    Technical Specifications
    ------------------------

                        Maximum
                        Rating   R(DS)(ON)(milliohms)C(rss) C(iss) r(g)
    Product           ---------- --------- ---------  (pF)  (pF) (ohms)
    Number  Polarity V(DSS) I(D)   Typ.      Max.     Typ.  Typ.  Typ. Process
                      (V)  (A)
    ------  --------  ---  ---     ---       ---      ---   ---   ---  -------

    TPCC8001-H  N-    30   22      5.5       8.3      110  1900   1.0   UMOS
              Channel           V(GS)=10V  V(GS)=10V                     V-H
    --------- ------- --   --   ---------   --------   ---  ----   ---   ----

    TPCC8002-H  N-    30   22      5.5        8.3     110  1900   3.2   UMOS
              Channel           V(GS)=10V  V(GS)=10V                     V-H
    --------- ------- --   --   ---------  ---------  ---  ----   ---   ----

    TPCC8003-H  N-    30   13     12.2      16.9       63   990   0.8   UMOS
              Channel           V(GS)=10V  V(GS)=10V                    VI-H
    --------- ------- --   --   ---------  ---------   --  ----   ---   ----

    TPCC8005-H  N-    30   26      4.3        6.4     140  2200   3.4   UMOS
              Channel           V(GS)=10V  V(GS)=10V                    VI-H
    --------- ------- --   --   ---------  ---------  ---  ----   ---   ----

    TPCC8006-H  N-    30   22      5.3        8.0     110  1700   2.8   UMOS
              Channel           V(GS)=10V  V(GS)=10V                    VI-H
    --------- ------- --   --   ---------  ---------  ---  ----   ---   ----

    TPCC8A01-H  N-    30   21      7.1        9.9      54  1430   1.5   UMOS
              Channel           V(GS)=10V  V(GS)=10V                    V-H
               MOSBD                                                   MOSBD
    --------- ------- --   --   ---------  ---------   --  ----   ---  -----

Pricing and Availability

Samples of these latest additions to the Toshiba MOSFETs lineup in TSON packages are available now, with mass production beginning to ramp. Prices in sample quantities start at $0.35.

Toshiba's Discrete Products

Since 1986, Toshiba Corp. has ranked as the top discrete supplier on a worldwide basis, based on annual revenue from international shipments of total discrete products. According to the most recent annual report from market research firm Gartner Dataquest (San Jose, CA), Toshiba remained the top discrete semiconductor supplier. (Source: "2008 Worldwide Semiconductor Market Share Report," Gartner, April 2009). More specifically, Toshiba is a leading supplier in a number of discrete product categories, including power transistors, rectifiers, LMOS logic, CMOS logic, photocouplers, TOSLINKs, LEDs, small signal diodes and transistors. The company's discrete devices are designed to meet the growing demand for high-performance and lower voltages in today's wireless telecommunications and consumer electronics applications, while emphasizing its strength in the automotive and industrial markets.

*About TAEC and Toshiba Corp.

Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.

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