Renesas Electronics Introduces High-Reliability Advanced Low-Power SRAM Products

Capacitors in which the electrodes are formed from polysilicon and metal. Use of stacked capacitors formed in the upper layer of MOS transistors on the silicon substrate is an effective method for reducing the memory cell area.

(Note 6) TFT (thin-film transistor):
A transistor formed from thin-film polysilicon. Use of TFTs formed in the upper layer of MOS transistors on the silicon substrate as the SRAM load transistor is an effective method for reducing the memory cell area.

(Note 7) Full CMOS type:
An SRAM memory cell structure that has a total of 6 transistors, consisting of p-channel MOS and n-channel MOS transistors on the same silicon substrate surface. This memory cell has a large area and also has a risk of latch-up.

Pricing and Availability

Samples of Renesas Electronics' new SRAMs will be available in December 2014, priced at US$11.0. Mass production is scheduled to begin in January 2015. (Pricing and availability are subject to change without notice.)

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About Renesas Electronics Corporation

Renesas Electronics Corporation (TSE: 6723), the world’s number one supplier of microcontrollers, is a premier supplier of advanced semiconductor solutions including microcontrollers, SoC solutions and a broad-range of analog and power devices. Business operations began as Renesas Electronics in April 2010 through the integration of NEC Electronics Corporation (TSE:6723) and Renesas Technology Corp., with operations spanning research, development, design and manufacturing for a wide range of applications. Headquartered in Japan, Renesas Electronics has subsidiaries in 20 countries worldwide. More information can be found at www.renesas.com.

Product Specifications of the RMLV0816B and RMLV0808B Series of

SRAM (8 Mbit, 110 nm Process)

 
 
Part Number   Word

Organization

  Package   Supply

Voltage

  Access

Time

  Pin

Type

  Standby

Current

  Sample

Pricing

  Availability
RMLV0816BGSB-4S2   x16   TSOPⅡ(44)   2.7 V-3.6 V   45 ns   CS1   Up to 25℃: 2 μA (max.)
Up to 40℃: 4 μA (max.)
Up to 70℃: 7 μA (max.)
Up to 85℃: 10 μA (max.)
  US$11  

April 2015

  2.4 V-2.7 V   55 ns  
RMLV0816BGSA-4S2 TSOP�nbsp;(48) 2.7 V-3.6 V   45 ns CS2 April 2015
  2.4 V-2.7 V   55 ns  
RMLV0816BGBG-4S2 FBGA(48) 2.7 V-3.6 V   45 ns CS2 December 2014
  2.4 V-2.7 V   55 ns  
RMLV0816BGSD-4S2 μTSOPⅡ(52) 2.7 V-3.6 V   45 ns CS2 April 2015
      2.4 V-2.7 V   55 ns  
RMLV0808BGSB-4S2 x8 TSOPⅡ(44) 2.7 V-3.6 V   45 ns CS2 April 2015
      2.4 V-2.7 V   55 ns        
 




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