Toshiba Launches New Lineup of MOSFETs and Diodes for Wireless Power Transfer Applications

Schottky Barrier Diodes and Dual N-Channel MOSFETs Achieve Industry's Highest Performance in a 2mm Package

IRVINE, Calif., Sept. 5, 2012 — (PRNewswire) — Toshiba America Electronic Components, Inc., (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, today announced the introduction of a new lineup of small signal middle power type Schottky Barrier Diodes (SBD) and dual N-channel MOSFETs for wireless power transfer applications.

The demand for wireless charging is growing rapidly. In fact, consumers want their mobile devices – including mobile phones, tablets, notebook PCs, and digital still/video cameras – to charge themselves. A new class of products are being introduced that enable consumers to achieve this goal and charge their devices without plugging them into an outlet. These wireless power transfer applications require low ON-resistance and low forward voltage products for heat suppression in order to be suitable for battery drive devices – which require low power consumption.

"Consumer demands dictate that wireless charging capabilities will soon become the rule rather than the exception," noted Talayeh Saderi, business development engineer for TAEC.  "Our new line of dual N-channel MOSFETs and SBDs was designed to help make wireless power transfer a reality without sacrificing performance – in fact, Toshiba's new solutions have achieved the highest performance in the industry in a 2mm package."  

Uses for Toshiba's new lineup of MOSFETs and SBDs include backflow prevention in the 500mA USB charger line for mobile phones, contrary connection prevention for chargers, load-switching, low voltage rectification specification, bridge circuits, load switch circuits, power transmission stations for wireless power transfer, and wireless power transmission and receiving applications for mobile phones, tablet devices, notebook PCs, DSCs and DVCs.

Features include:

  • Low Rdson such as 15.3mOhm
  • Low VF (max): 0.45V, 0.5V, 0.57V
  • Smaller package such as UDFN (2x2mm2), SOT23F (2.8x2.9mm2), ESC (1.6x0.8mm2), CST2B(1.2x0.8mm2), etc.

Toshiba has a range of specifications and package lineups to provide the optimal solutions.

MOSFET

Polarity

Part number

VDSS (V)

VGSS (V)

ID (A)

RDS(ON) max (mΩ)

Package (mm)

IVGSI=2.5V

IVGSI=4.5V

IVGSI= 10V



SSM3J328R

-20

±8

-6

39.7

29.8

-

SOT-23F (2.8x2.9x0.8)



SSM6J501NU

-20

±8

-10

19

15.3

-

UDFN6B (2.0x2.0x0.75)

Pch

1in1

SSM6J502NU

-20

±8

-6

28.3

23.1

-

UDFN6B (2.0x2.0x0.75)



SSM3J332R

-30

±12

-6

72

50

42

SOT-23 F (2.8x2.9x0.8)



SSM3J334R

-30

±20

-4

-

105

71

SOT-23F (2.8x2.9x0.8)


2in1

SSM6P49NU

-20

±12

-4

76

56

45

UDFN6 (2.0x2.0x0.75)

Nch

1in1

SSM3K333R

30

±20

6

-

42

28

SOT-23F (2.8x2.9x0.8)


2in1

SSM6N55NU

30

±20

4

-

64

46

UDFN6 (2.0x2.0x0.75)


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